ReferencesMDP and MD-PICTS were originally developed at the Technische Universität Bergakademie Freiberg, Germany. There is a large variety of different semiconductors and dielectric materials that have been investigated over the years. Most of the work is protected by disclosure agreements. However there are a number of different publications that can be studied for more detailed informations.selected Publications:Contactless investigation of electrical properties and defect spectroscopy of mc-Si at low injection level 21st European Photovoltaic Solar Energy Conference, in press Contact less electrical defect characterisation of silicon by MD-PICTS Material Science in Semiconductor Processing, Elsevier, 241-245 Contact free defect investigation of wafer annealed SI InP Material Science in Semiconductor Processing 9, Elsevier, 355-358 Elektrische Charakterisierung und Defektanalytik von Silizium mit MDP und MD - PICTS Institut für Experimentelle Physik Freiberg, 2006 Mikrowellendetektierte Photoleitung und PICTS- Methodik und Anwendung auf GaAs Institut für Experimentelle Physik Freiberg, 2005 Non destructive electrical defect characterisation and topography of silicon wafers and epitaxial layers Mater. Res. Soc. Symp. Proc. Vol. 864, 2005 MRS Contact free defect investigation in as grown Fe doped SI - InP Mater. Res. Soc. Symp. Proc. Vol. 864, 2005 MRS Contact-free investigation of the EL2-defect in the surface of GaAs wafers Eur. Phys. J. Appl. Phys., Vol. 27 (2004), No. 1-3, p. 363-366 |