non destructiv measurement of electrical parameters like:
- minority carrier lifetime
- mobility
- diffusion length
- defect properties
all of them can be mapped simultaneously and have far reaching significant impact on semiconductor device properties and performance. This characterisation technique has been named Microwave Detected Photoconductivity (MDP)

Temperature dependent measurements allow for the spatially resolved extraction of defect properties like:
- activation energy
- capture cross section
- defect concentration
This technique is called Microwave Detected - Photo Induced Current Transient Spectroscopy (MD-PICTS). Conventional PICTS is well known on compound semiconductors. MD-PICTS is the first time possible on silicon and other materials and gives access to so far not detectable defects.

For more details see publications and feel free to contact us.